MITSUBISHI MOSFET Power Amplifier RF Modules


Best Sale

Up Teks MITSUBISHI MOSFET Power Amplifier RF Modules Service Introduction

UP TEKS CO., LTD. is Taiwan MITSUBISHI MOSFET Power Amplifier RF Modules supplier and manufacturer with more than 29 years experence. Since 1987, in the Electronic Components Industry, Up Teks has been offering our customers high quality MITSUBISHI MOSFET Power Amplifier RF Modules production service. With both advanced technology and 29 years experience, Up Teks always make sure to meet each customer's demand.

MITSUBISHI MOSFET Power Amplifier RF Modules


RF Power MOSFET Amplifier Module, RoHS Compliant, 135-175MHz, 8W, 12.5V, 2 Stage Amp. for Portable Radio, H46S


• Silicon RF Power Semiconductors
• 12.5V Operation RF High Power MOS FET Module
• High Frequency Module
• Si Power RF Modules
• MOSFET Amplifier Power RF Modules
• Metal-Oxide-Semiconductor Field-Effect Transistor Module, MOSFET Module
• Mitsubishi Silicon RF devices support wireless communication networks
• Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market
• The RA08H1317M is a 8-watt RF MOSFET Amplifier Modules for 12.5-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage(VGG = 0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V(minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V(typical) and 3.5V(maximum). At VGG = 3.5V, the typical gate current is 1mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power

  [1] Enhancement-Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V, VGG = 0V)
  [2] Pout > 8W @ VDD = 12.5V, VGG = 3.5V, Pin = 20mW
  [3] ηT > 40% @ Pout = 8W (VGG control), VDD = 12.5V, Pin = 20mW
  [4] Broadband Frequency Range: 135-175MHz
  [5] Low-Power Control Current IGG = 1mA (typ) at VGG = 3.5V
  [6] Module Size: 30 x 10 x 5.4 mm
  [7] Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
  [8] Lead-Free Type
  [9] RoHS Compliant
• Drain Voltage(VDD)(Max.ratings): 16V(VGG = 0V , Pin = 0W)
• Drain Voltage(VDD)(Max.ratings): 13.2V(VGG < 3.5V)
• Gate Voltage(VGG)(Max.ratings): 4V(VDD < 12.5V , Pin < 20mW)
• Input Power(Pin)(Max.ratings): 40mW(f = 135-175MHz , ZG = ZL = 50Ω)
• Output Power(Pout)(Max.ratings): 10W(f = 135-175MHz , ZG = ZL = 50Ω)
• Frequency Range(f): 135-175MHz
• Drain Voltage(VDD): 12.5V
• Input Power(Pin): 20mW
• Output Power(Pout)(Min): 8W(VDD = 12.5V , VGG = 3.5V , Pin = 20mW)
• Total Efficiency(ηT)(Min): 40%(Pout = 8W (VGG control) , VDD = 12.5V , Pin = 20mW)
• Gata Current(IGG)(Typ): 1mA(Pout = 8W (VGG control) , VDD = 12.5V , Pin = 20mW)
• Operation Case Temperature Range(Tcase)(op): -30°C to +90°C
• Storage Temperature(Tstg): -40°C to +110°C
• Brand Name: MITSUBISHI
• Mounting Type: Through Hole / DIP(Dual in -line package)
• Package Outline: H46S
• Lead Count: 5
• Packing: Antistatic tray, 50 modules / tray
• Compatible with many other wireless communication products
• RF Power MOSFET Amplifier Modules Mass Stock
• We supply various electronic components and welcome your inquiry

Related Document