Short Product Description:
SMD PNP Silicon General Purpose Transistor, RoHS Compliant, -40V, -100mA, 250mW, 0.15GHz, SOT-23
Technical Specification:
Technical Specification Sheet DownLoad
Detailed Product Description:
• NXP Transistors
• Silicon PNP Transistor
• SMD Transistors
• General Purpose Transistor
• Surface Mount PNP Transistors
• Bipolar Junction Transistors (BJT)
• Single Transistors PNP
• PNP Transistor in a SOT23 plastic package
• Complementary to PMBS3904
• Applications: General purpose switching and amplification, e.g. telephony and professional communication equipment
• Features:
[1] Low current (max. 100mA)
[2] Low voltage (max. 40V)
[3] Lead-Free Type
[4] RoHS Compliant
• Transistor Polarity: PNP
• Collector-Base Voltage(VCBO)(Max): -40V
• Collector-Emitter Voltage(VCEO)(Max): -40V
• Emitter-Base Voltage(VEBO)(Max): -5V
• Collector Current(IC)(Max): -100mA
• Total Power Dissipation(Ptot)(Max): 250mW
• Collector-Base Cut-off Current(ICBO)(Max): -50nA(VCB = -30V , IE = 0A)
• Emitter-Base Cut-off Current(IEBO)(Max): -50nA(VEB = -5V , IC = 0A)
• Collector-Emitter Saturation Voltage(VCE)(sat)(Max): -250mV(IC = -10mA , IB = -1mA)
• Collector-Emitter Saturation Voltage(VCE)(sat)(Max): -400mV(IC = -50mA , IB = -5mA)
• Transition Frequency(fT)(Min): 0.15GHz(IC = -10mA , VCE = -20V , f = 100MHz)
• Collector Capacitance(Cc)(Max): 4.5pF(VCB = -5V , IE = 0A , f = 1MHz)
• Emitter Capacitance(Ce)(Max): 12pF(VEB = -0.5V , IC = 0A , f = 1MHz)
• Junction Temperature(TJ): 150°C
• Storage Temperature Range(Tstg): -65°C to +150°C
• Brand Name: NXP Semiconductors
• Mounting Type: SMD(Surface-Mounted Device)
• Package Type: SOT-23(TO-236AB)
• Lead Count: 3
• Packing: PMBS3906,215(3,000 units / reel), PMBS3906,235(1,000 units / reel)
• SMD General Purpose Bipolar Transistors Mass Stock
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