Short Product Description:
SMD NPN Silicon RF Transistor, RoHS Compliant, 12V, 100mA, 200mW, 7GHz, SOT-23
Technical Specification:
Technical Specification Sheet DownLoad
Detailed Product Description:
• RENESAS RF Transistors
• RF Devices
• Silicon NPN RF Transistor
• High Frequency Transistors
• RF & Microwave Devices
• Surface Mount NPN Transistor
• SMD RF Transistors
• Low Noise RF Bipolar Transistors
• NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
• Applications: industrial, commercial and entertainment products
• Features:
[1] Low noise and high gain: NF = 1.1dB(Typ), Ga = 11dB(Typ) @ VCE = 10V, IC = 7mA, f = 1GHz
[2] High power gain: MAG = 13dB(Typ) @ VCE = 10V, IC = 20mA, f = 1GHz
[3] Lead-Free Type
[4] RoHS Compliant
• Transistor Polarity: NPN
• Collector-Base Voltage(VCBO)(Max): 20V
• Collector-Emitter Voltage(VCEO)(Max): 12V
• Emitter-Base Voltage(VEBO)(Max): 3V
• Collector Current(IC)(Max): 100mA
• Total Power Dissipation(Ptot)(Max): 200mW
• Collector Cut-off Current(ICBO)(Max): 1µA(VCB = 10V , IE = 0A)
• Emitter Cut-off Current(IEBO)(Max): 1µA(VEB = 1V , IC = 0A)
• DC Current Gain(hFE)(Min): 50(VCE = 10V , IC = 20mA)
• DC Current Gain(hFE)(Typ): 120(VCE = 10V , IC = 20mA)
• DC Current Gain(hFE)(Max): 250(VCE = 10V , IC = 20mA)
• Gain Bandwidth Product(fT)(Typ): 7GHz(VCE = 10V , IC = 20mA)
• Insertion Power Gain(|S21e|2)(Typ): 11.5dB(VCE = 10V , IC = 20mA , f = 1GHz)
• Noise Figure(NF)(Typ): 1.1dB(VCE = 10V , IC = 7mA , f = 1GHz)
• Noise Figure(NF)(Max): 2dB(VCE = 10V , IC = 7mA , f = 1GHz)
• hFE Classification: R23(Q/YQ): 50~100, R24(R/YR): 80~160, R25(S/YS): 125~250
• Junction Temperature(TJ): 150°C
• Storage Temperature Range(Tstg): -65°C to +150°C
• Brand Name: RENESAS
• Mounting Type: SMD(Surface-Mounted Device)
• Package Type: SOT-23(MINIMOLD)
• Lead Count: 3
• Packing: 3,000 units / reel
• SMD Bipolar RF Transistors Mass Stock
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