Short Product Description:
DIP NPN Silicon Power Transistor, RoHS Compliant, 100V, 3A, 40W, TO-220
Technical Specification:
Technical Specification Sheet DownLoad
Detailed Product Description:
• STMicroelectronics Power Transistors
• NPN Power Transistors
• Complementary Silicon Power Transistors
• Power NPN Transistors
• Bipolar Power Transistor
• DIP Transistors
• Power Bipolar Transistors
• The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP31C that make this device suitable for audio, power linear and switching applications. The PNP type is TIP32C
• Applications:
[1] industrial, commercial and entertainment products
[2] Linear and switching industrial application
• Features:
[1] New enhanced series
[2] High switching speed
[3] hFE improved linearity
[4] hFE Grouping
[5] Lead-Free Type
[6] RoHS Compliant
• Transistor Polarity: NPN
• Collector-Base Voltage(VCBO)(Max): 100V
• Collector-Emitter Voltage(VCEO)(Max): 100V
• Emitter-Base Voltage(VEBO)(Max): 5V
• Collector Current(IC)(Max): 3A
• Base Current(IB)(Max): 1A
• Total Dissipation(Ptot)(Max): 40W
• Collector Cut-off Current(ICEO)(Max): 0.3mA(VCE = 60V , IB = 0A)
• Emitter Cut-off Current(IEBO)(Max): 1mA(VEB = 5V , IC = 0A)
• Collector-Emitter Saturation Voltage(VCE)(sat)(Max): 1.2V(IC = 3A , IB = 375mA)
• DC Current Gain(hFE)(Min): 25(IC = 1A , VCE = 4V)
• DC Current Gain(hFE)(Min): 10(IC = 3A , VCE = 4V)
• DC Current Gain(hFE)(Max): 50(IC = 3A , VCE = 4V)
• Operating Junction Temperature(TJ): 150°C
• Storage Temperature Range(Tstg): -65°C to +150°C
• Brand Name: STMicroelectronics(ST)
• Mounting Type: Through Hole / DIP(Dual in -line package)
• Package Type: TO-220
• Lead Count: 3
• Packing: 50 units / tube
• DIP Bipolar Power Transistors Mass Stock
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