Short Product Description:
DIP NPN Silicon Power Transistor, RoHS Compliant, 100V, 6A, 65W, TO-220
Technical Specification:
Technical Specification Sheet DownLoad
Detailed Product Description:
• STMicroelectronics Power Transistor
• NPN Power Transistors
• Complementary Silicon Power Transistors
• Power NPN Transistor
• Bipolar Power Transistors
• DIP Transistor
• Power Bipolar Transistors
• The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications
• The complementary PNP type is TIP42C
• Applications:
[1] industrial, commercial and entertainment products
[2] General purpose circuits
[3] Audio amplifier
[4] Power linear and switching
• Features:
[1] Complementary PNP-NPN devices
[2] New enhanced series
[3] High switching speed
[4] hFE improved linearity
[5] Lead-Free Type
[6] RoHS Compliant
• Transistor Polarity: NPN
• Collector-Base Voltage(VCBO)(Max): 100V
• Collector-Emitter Voltage(VCEO)(Max): 100V
• Emitter-Base Voltage(VEBO)(Max): 5V
• Collector Current(IC)(Max): 6A
• Base Current(IB)(Max): 3A
• Total Dissipation(Ptot)(Max): 65W
• Collector Cut-off Current(ICEO)(Max): 0.7mA(VCE = 60V , IB = 0A)
• Emitter Cut-off Current(IEBO)(Max): 1mA(VEB = 5V , IC = 0A)
• Collector-Emitter Saturation Voltage(VCE)(sat)(Max): 1.5V(IC = 6A , IB = 0.6A)
• DC Current Gain(hFE)(Min): 30(IC = 0.3A , VCE = 4V)
• DC Current Gain(hFE)(Min): 15(IC = 3A , VCE = 4V)
• DC Current Gain(hFE)(Max): 75(IC = 3A , VCE = 4V)
• Operating Junction Temperature(TJ): 150°C
• Storage Temperature Range(Tstg): -65°C to +150°C
• Brand Name: STMicroelectronics(ST)
• Mounting Type: Through Hole / DIP(Dual in -line package)
• Package Type: TO-220
• Lead Count: 3
• Packing: 50 units / tube
• DIP Bipolar Power Transistors Mass Stock
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